Browsing by Issue Date, starting with "2016-12-18"

Now showing 1 - 20 of 15769

李琪偉　顛覆人生之險
(2016-12-18)
林芃蕙
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Department of Communication and Technology
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傳播與科技學系
罹患癲癇這幾年的心路歷程，淬鍊出微笑往前的動力，不甘自己一事無成，李琪偉重新定義生命。
密集度第一　台灣便利商店
(2016-12-18)
凃湘羚
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Department of Communication and Technology
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傳播與科技學系
台灣便利商店密集度位居世界第一，方便而快速的產業背後，所面臨的問題。
熱舞派對　歡欣落幕
(2016-12-18)
吳偉立
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Department of Communication and Technology
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傳播與科技學系
交通大學熱舞社首次以內部派對的形式，代替公開的成果發表，透過照片來回顧當天的盛況。
資料服務嘉年華　與民同樂
(2016-12-18)
張芳語
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范晨星
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Department of Communication and Technology
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傳播與科技學系
2016年資料服務嘉年華會於12月9日舉行，現場23家業者與競賽獲獎團隊介紹他們的資料創新產品，期望民眾能對資料創新服務更有感。
藍光危害知多少
(2016-12-18)
魏若芸
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Department of Communication and Technology
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傳播與科技學系
3C產品充斥現代生活，無形的藍光危害無所不在。消費者在了解何謂藍光的同時，更該養成使用科技產品的正確習慣。
未來儲能新星　鋁離子電池
(2016-12-18)
張巧宜
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Department of Communication and Technology
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傳播與科技學系
工研院與美國史丹佛大學合作，共同開發「鋁離子電池」，突破既有的電池系統，研究成果登上英國「自然」期刊，2016年11月更獲得有科技業奧斯卡之稱的百大科技研發獎。
性別書店房主　蔡善雯
(2016-12-18)
朱倫君
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Department of Communication and Technology
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傳播與科技學系
隱身於老市場裡的性別書店，從房主蔡善雯的婚姻故事到經營性別書店。
柴伊恩　冒險家式的教學
(2016-12-18)
洪于婷
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Department of Communication and Technology
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傳播與科技學系
本文專訪英語教師柴伊恩，詳實紀錄他的精彩生命歷程。帶著讀者看柴伊恩從捨棄優渥工作，到進入深林打坐、學太極拳尋找生命意義，最後成為英語專任教師。
智慧安全帽　騎士新選擇
(2016-12-18)
鄧涵文
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Department of Communication and Technology
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傳播與科技學系
物聯網的世代來臨，智慧穿戴裝置異軍突起。安全帽結合新科技，掀起一波安全帽革命。
八惡人　行經人間極惡之地
(2016-12-18)
李瑞彥
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Department of Communication and Technology
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傳播與科技學系
評論電影「八惡人」，在血腥與惡行之外，還有什麼事物令人不願直視？
貼圖商機　插畫平台無限大
(2016-12-18)
邱琨皓
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Department of Communication and Technology
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傳播與科技學系
貼圖的興起影響了全球各層面，不管是產業的改進還是生活的改變，未來都將成為即時通訊主流。
歐式聖誕市集　親友同樂
(2016-12-18)
沈慶柔
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Department of Communication and Technology
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傳播與科技學系
緣起400年前歐洲，歷史悠久的聖誕市集史特拉斯堡重現台北。
總編輯的話
(2016-12-18)
何書馨
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Department of Communication and Technology
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傳播與科技學系
喀報第256期頭題為影評「八惡人行經人間極惡之地」，本期有多篇貼近生活的報導，包含智慧安全帽的發明與藍光危害的科技新知，以及聚焦於獨特個人經歷的人物特寫，值得讀者細細品味。
綠光青春
(2016-12-18)
郭宜婷
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Department of Communication and Technology
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傳播與科技學系
高中歲月逐漸模糊，利用校慶返回母校，勾回彼時北一三年的記憶。
微創曙光　達文西手術系統　
(2016-12-18)
張芸瑄
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Department of Communication and Technology
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傳播與科技學系
達文西手術系統，將醫療推上另一個層次並探討其優缺。
轉彎　走入夜貓子電影院
(2016-12-18)
王羽廷
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Department of Communication and Technology
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傳播與科技學系
陳若怡，清大夜貓子電影院策展人。雖然距離喀報所屬的國立交通大學很近，卻很少人認識這位默默愛著電影的電影院幕後工作人員。
交大e-News第223期-打造資安將才交通大學首創亥客書院
(2016-12-20)
國立交通大學秘書室
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Secretariat
Multiple-pulse microcavity lasing from an optically induced confinement
(2016-12-20)
Xie, Wei
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Hsu, Feng-kuo
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Lee, Yi-Shan
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Lin, Sheng-Di
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Lai, Chih Wei
Coupled electron-hole-photon systems in semiconductor microcavities have been a platform for studies of laser dynamics and nonequilibrium cooperative phenomena in solid states. Here, we report the observation of multiple-pulse lasing in optically induced confinement in a highly photoexcited semiconductor microcavity at room temperature. The spatially photomodulated refractive index changes enable an additional lateral photonic confinement, and discrete transverse modes result. Temporally and spectrally resolved measurements of the radiation reveal multiple sub-10-ps pulsed radiation commencing in order from high-to low-energy modes. Under a circularly polarized optical pumping, the high-energy mode emerges within 10 ps after the pulsed excitation and has a near-unity circular polarization. We attribute the observed cooperative effects to light-induced correlated e-h pairs in a high-density plasma and their effective coupling to discrete transverse modes in the spatially photomodulated optical confinement. (C) 2016 Optical Society of America
Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression
(2016-12-21)
Chang, Cheng-Yi
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Pan, Fu-Ming
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Lin, Jian-Siang
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Yu, Tung-Yuan
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Li, Yi-Ming
We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/mu m. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/mu m. Published by AIP Publishing.
"Embedded Emitters": Direct bandgap Ge nanodots within SiO2
(2016-12-21)
Kuo, M. H.
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Chou, S. K.
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Pan, Y. W.
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Lin, S. D.
;
George, T.
Microdisk-arrays of vertically stacked 30-70nm Ge nanodots embedded within SiO2 were fabricated using thermal oxidation of Si0.75Ge0.25 abacus-shaped pillars and followed by post-annealing in oxygen-deficient conditions. The Ge nanodots are subjected to increasing quantum-confinement and tensile-strain by reducing dot size. We show that considerable quantum-confinement and tensile-strain can be generated within 30 nm Ge nanodots embedded in SiO2, as evidenced by large Raman red shifts for the Ge-Ge phonon lines in comparison to that for bulk Ge. These large quantum-confinement and tensile-strain facilitate direct-bandgap photoluminescence experimentally observed for the Ge nanodots, and are consistent with the strain-split photoluminescence transitions to the light-hole (LH) and heavy-hole (HH) valence bands at 0.83 eV and 0.88 eV, respectively. Time-resolved photoluminescence measurements conducted from 10-100K show temperature-insensitive carrier lifetimes of 2.7 ns and 5 ns for the HH and LH valence-band transitions, respectively, providing additional strong evidence of direct bandgap photoluminescence for tensile-strained Ge nanodots. Published by AIP Publishing.