Browsing by Issue Date, starting with "2017-03-15"

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Rapid capture and labeling of cells on single domain antibodies-functionalized flow cell
(2017-03-15)
Chen, Guan-Yu
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Li, Zeyang
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Duarte, Joao N.
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Esteban, Alexandre
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Cheloha, Ross W.
Current techniques to characterize leukocyte subgroups in blood require long sample preparation times and sizable sample volumes. A simplified method for leukocyte characterization using smaller blood volumes would thus be useful in diagnostic settings. Here we describe a flow system comprised of two functionalized graphene oxide (GO) surfaces that allow the capture of distinct leukocyte populations from small volumes blood using camelid single-domain antibodyfragments (VHHs) as capture agents. We used site-specifically labeled leukocytes to detect and identify cells exposed to fungal challenge. Combining the chemical and optical properties of GO with the versatility of the VHH scaffold in the context of a flow system provides a quick and efficient method for the capture and characterization of functional leukocytes.
'Symbiotic' semiconductors: unusual and counter-intuitive Ge/Si/O interactions
(2017-03-15)
George, T.
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Li, P. W.
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Chen, K. H.
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Peng, K. P.
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Lai, W. T.
Since the inception of the first transistors in the 1940s, the immense body of work on the Group IV semiconductors, Si and Ge, has spearheaded spectacular advances in modern integrated-circuit (IC) technology that has enabled a vast landscape of device applications in logic, memory, and computing. Although initially Si supplanted Ge as the material of choice for metal-oxide-semiconductor field-effect transistors, Ge-based devices are now breaking new ground. Widespread and innovative Ge-based applications exist in optoelectronics, communications, microelectro-mechanical systems, and energy harvesting/savings. On the fundamental, materials science front, while it is well known that Ge and Si are fully miscible in each other, the nature and extent of their attraction for each other has largely been unexplored. In this paper, we report a rather curious interplay between Ge and Si that occurs at high temperature (similar to 900 degrees C) and that can be best described as 'symbiotic'. Each element appears to facilitate reactions in the other which would otherwise not be possible. Oxygen intersititials also appear to play a major role in these reactions. Our experimental work has allowed us to classify four distinct regimes where these reactions occur. We describe these conditions and provide the necessary theoretical explanations for these results.
Anisotropic spin-flip-induced multiferroic behavior in kagome Cu3Bi(SeO3)(2)O2Cl
(2017-03-15)
Wu, H. C.
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Chandrasekhar, K. Devi
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Yuan, J. K.
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Huang, J. R.
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Lin, J. -Y.
Compared to the previous report on Cu3Bi(SeO3)(2)O2X (X = Cl, Br) [V. Gnezdilov et al., (arXiv: 1604.04249)], where no dielectric anomaly was observed without magnetic field near T-N similar to 25.6K, we further present the dielectric behaviors without and with magnetic field in Cu3Bi(SeO3)(2)O2Cl. At zero field H = 0, an antiferromagnetic transition from magnetization and specific heat measurements is clearly established at T-N, while no dielectric anomaly was observed. Those results are similar to the previous report [V. Gnezdilov et al., (arXiv: 1604.04249)]. Above the critical field H-c similar to 0.8 T, a metamagnetic spin-flip transition from antiferromagnetic to ferrimagnetic order at T similar to T-N is induced anisotropically only for H broken vertical bar broken vertical bar c. Meanwhile, a ferroelectric behavior from dielectric and pyroelectric current measurements is observed below T similar to T-N; then a corresponding type-II multiferroics emerges above H-c. The key mechanism of the anisotropic spin-flip-induced multiferroicity in Cu3Bi(SeO3)(2)O2Cl can be ascribed to the breaking of magnetic twofold symmetry in the bc plane above H-c.
Modified solvatochromic equations for better estimation of ground and excited state dipole moments of p-aminobenzoicacid (PABA): Accounting for real shape over hypothetical spherical solvent shell
(2017-03-15)
Demissie, Ephrem G.
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Mengesha, Ephriem T.
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Woyessa, Girma W.
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交大名義發表
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National Chiao Tung University
Solvatochromic equations are critically dependent on the choice and values of the Onsager cavity radius, hence incorrect choice of the cavity radius could lead to erroneous estimates of dipole moment. The equations approximate a molecule as a point dipole residing in a spherical solvent cavity. However, for elongated molecules having elliptical shapes, such approximation is rather an over simplification. The problem of deducing the Onsager radius of long chain molecules in solvatochromic equations is reexamined from the point of view of solvent cavity volume. Consequently, we improved the equations by incorporating the volume of a cavity which is more appropriate to represent the real shape and size of the molecule of interest. The ground and excited state dipole moments of our model system, PABA, were calculated according to improved Lippert-Mataga, Bakhshiev's, Bilot-Kawski and McRae's equations. In this work, ground-sate dipole moment determined using the improved Lippert's equation remarkably yields quite close result with a values estimated by electric deflection methods Solvation of PABA has also been studied theoretically by integral equation formalism polarizable continuum model (IEF-PCM) with density functional theory (DFT) methods to obtain absorption energies, ground-state dipole moments, volume of cavity. The calculations predicted solvent effects on absorption band maxima and the molar volume which are in agreement with the experimental data. (C) 2017 Elsevier B.V. All rights reserved.
SILICON-CONTROLLED RECTIFIER AND AN ESD CLAMP CIRCUIT
(2017-03-16)
Chun-Yen Chang
;
Shiang-Shiou Yen
;
Shao-Chin Chang
;
Che-Wei Chiang
A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.
DEVICE OF DROWSINESS DETECTION AND ALARM AND METHOD OF THE SAME
(2017-03-16)
Chin-Teng LIN
;
Yi-Hsin YU
;
Li-Wei KO
A device of drowsiness detection and alarm includes a headrest, at least one brainwave sensor, a computing unit, a controlling unit and an accessory unit. The brainwave sensor is disposed on the headrest and configured to contact with a user's head and detect a brainwave signal. The computing unit receives the brainwave signal from the brainwave sensor and calculates according to the brainwave signal to obtain a fatigue index. The controlling unit controls the accessory unit to activate according to the fatigue index. Therefore, when the user is drowsy and gradually loses consciousness, the accessory unit can immediately alarm the user and allow the user stay awake to avoid the occurrence of accidents. A method of drowsiness detection and alarm is also disclosed.
High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects
(2017-03-16)
Kuo, Ming-Hao
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Lee, Meng-Chun
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Lin, Horng-Chih
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George, Tom
;
Li, Pei-Wen
We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850-1550 nm illumination. Each device has a self-organized, gate-stacking heterostructure of SiO2/Ge-dot/SiO2/SiGe-channel which is simultaneously fabricated in a single oxidation step. Superior control of the geometrical size and chemical composition for our Ge nanodots/SiO2/Si1-xGex-shell MOS structure enables the practically-achievable, gate-stacking design for our Ge-dot photoMOSFETs. Both the gate oxide thickness and the diameter of the Ge dots are controllable. Large photocurrent enhancement was achieved for our Ge-dot photoMOSFETs when electrically-biased at ON-and OFF-states based on the Ge dot mediating photovoltaic and photoconductive effects, respectively. Both photoelectric conversion efficiency and response speed are significantly improved by reducing the gate-oxide thickness from 38.5 nm to 3.5 nm, and by decreasing Ge-dot size from 90 nm to 50 nm for a given areal density of Ge dots. Photoresponsivity ( R) values as high as 1.2 x 10(4) A/W and 300 A/W are measured for 10 nW illumination at 850 nm and 1550 nm, respectively. A response time of 0.48 ns and a 3 dB-frequency of 2 GHz were achieved for 50 nm-Ge-dot photoMOSFETs with channel lengths of 3 mu m under pulsed 850 nm illumination.
具視力補償之頭戴式顯示裝置
(2017-03-16)
林怡欣
;
陳宏山
本發明揭露一種具視力補償之頭戴式顯示裝置，包含：一顯示模組，用以顯示一影像；一透鏡模組，其設置於顯示模組之一出光光路，用以形成影像之一放大影像以供一使用者觀看，其中透鏡模組包含：一正透鏡模組；以及一液晶透鏡構件，其與正透鏡模組整合在一起；以及一調整構件，其與透鏡模組連接，用以選擇性調整正透鏡模組以及液晶透鏡構件至少其中之一者的位置，以補償使用者之一異常視力。
SYSTEM AND METHOD FOR BLOOD PRESSURE MEASUREMENT, COMPUTER PROGRAM PRODUCT USING THE METHOD, AND COMPUTER-READABLE RECORDING MEDIUM THEREOF
(2017-03-16)
Sheng-Chieh Huang
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Paul C.-P. Chao
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Yung Hua Kao
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Tse-Yi Tu
;
Pei-Yu Chiang
The present invention provides a system and method for blood pressure measurement, a computer program product using the method, and a computer-readable recording medium thereof. The present invention uses a sensor to measure an electrophysiological signal and establishes a personalized cardiovascular model through a numerical method, and re-establishes the personalized cardiovascular model through an optimization algorithm. Thus, a human physiological parameter generated from the re-established personal cardiovascular model matches the electrophysiological signal. Therefore, the present invention can provide accurate measurement results with the advantage of a small size, and can be applied to telemedicine field.
一種分光器及其光譜儀
(2017-03-16)
黃正昇
;
林信安
一種分光器，其用以與一光感測器組成一光譜儀。分光器包含一導模共振濾波器，其具有多個共振區。每一共振區具有彼此相異之一濾波特性，以反射一待測光源中之一第一光線或透射待測光源中之一第二光線至光感測器，其中第一光線與第二光線之波長相異。本發明一實施例之分光器與光感測器組成一套微型、高解析以及低成本之光譜儀，其是利用導模共振濾波器之多個共振區與光感測器之多個感光區之透射效率對應關係，以得知待測光源之光譜資料。
SYSTEM FOR DETECTING CORE BODY TEMPERATURE AND METHOD FOR THE SAME
(2017-03-16)
Chin-Teng LIN
;
Li-Wei KO
;
Dar-Shong LIN
;
Bo-Kai LIN
;
Tzu-Yu KUO
A system for detecting a core body temperature includes a detection unit, an ECG wave-filter, a body-temperature detection unit, a processing unit, a breath computing and processing unit, a heart-beat computing and processing unit, and a core body temperature computing and processing unit. The detection unit senses the body, and then the ECG wave-filter and body-temperature detection unit measures the electrical cardiac signal and the shell temperature, respectively. The processing unit collects the signals generated by the ECG wave-filter and body-temperature detection unit and transmits the collected signals to the breath computing and processing unit and the heart-beat computing and processing unit, which generate the core body temperature according to the received signals. Accordingly, it is possible to increase the physical parameters for monitoring the vital signs comprehensively. In addition, a method for detecting a core body temperature is also disclosed.
氣體可穿透垂直式感測器及包含其之氣體感測系統
(2017-03-16)
冉曉雯
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呂家榮
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莊明諺
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陳建男
一種氣體可穿透垂直式感測器，用以感測待測氣體，其包含：基板，其包含氣體可穿透結構以用於供待測氣體穿透；以及感測組件，其係設置於基板之上表面上，感測組件包含：氣體可穿透電極及感測層。氣體可穿透電極設置於該基板的上表面並包含複數個孔洞用以供該待測氣體穿透。感測層設置於基板之上表面與氣體可穿透電極之間，其中待測氣體係以垂直基板之上表面的方向穿透感測組件及基板後而被感測。包含上述氣體可穿透垂直式感測器之氣體感測系統亦於此處被提出。
介電質熔絲型記憶電路及其操作方法
(2017-03-16)
莊紹勳
;
謝易叡
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黃智宏
本發明提出一種可一次性寫入並重複隨機讀取的積體電路記憶體，此記憶體係利用介電質熔絲的方式，作為儲存元件的寫入操作，其主要特徵為，施加一電場於介電質使得其內之離子被析出或介電質熔毀，造成介電質結構損壞，呈穿孔狀，經由介電質穿隧的電流將由寫入前的高電導(低電阻)態轉變為低電導(高電阻)態，此機制已整合於超大型積體電路中完成積體電路記憶體之驗證，並利用CMOS製程實現之。
總編輯的話
(2017-03-19)
魏若芸
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Department of Communication and Technology
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傳播與科技學系
本期喀報為260期，以「線上學習E-learning」為頭題，利用資訊圖表來呈現線上學習產業的概況。另外本期兩篇動畫在切合主題之餘互動效果十足，完整地把資訊藉由遊戲呈現出來。
臺灣矽谷　交通壅堵
(2017-03-19)
曾婕茵
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Department of Communication and Technology
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傳播與科技學系
探討新竹市交通壅塞的成因，並檢視過去與現今的交通政策與影響。
糕點師　磨出苦澀後的甜蜜
(2017-03-19)
黃佳俐
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Department of Communication and Technology
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傳播與科技學系
從各個面向介紹糕點師一職。
過度捕撈　海洋生態危機
(2017-03-19)
張博倫
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Department of Communication and Technology
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傳播與科技學系
介紹過度捕撈的相關數據和原因。
線上學習E-learning
(2017-03-19)
朱倫君
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Department of Communication and Technology
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傳播與科技學系
全球線上學習產業概況。
孩時狂熱　掌上遊戲機
(2017-03-19)
郭宜婷
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Department of Communication and Technology
;
傳播與科技學系
八年級生的我們，即便從第二代掌機才開始接觸這類電玩，仍是孩時歲月不可抹滅的重要回憶。
在長夜出口　祝你一路順風
(2017-03-19)
李瑞彥
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Department of Communication and Technology
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傳播與科技學系
評論電影「一路順風」，分析其文本意涵與角色，並進行電影的剖析與探討。