Browsing by Issue Date, starting with "2017-09-20"

Now showing 1 - 20 of 13153

Light energy transformation over a few nanometers
(2017-09-20)
Huang, Hung Ji
;
Liu, Bo-Heng
;
Su, James
;
Chen, Po-Jui
;
Lin, Chun-Ting
Continuous platinum (Pt) thin film was fabricated via the plasma-enhanced atomic layer deposition method for a study of light energy transformation over a few nanometers. Light-to-heat experiments were used to determine the oscillating size effects on electromagnetic energy transformation in quantum wells of smooth and condensed Pt thin films. For Pt-film thicknesses of around 4 nm, 7 nm and 12 nm, electromagnetic heating presented unexpectedly high energy conversion efficiency. An empirical equation acquired from the fitting of the experimental data from various thicknesses of Pt thin films was suggested to describe the oscillating electromagnetic heating and quantized energy transformation. The experimental results show that size control of the nanostructures is extremely important for future applications involving quantum effects in nano devices.
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
(2017-09-20)
Simanjuntak, Firman Mangasa
;
Chandrasekaran, Sridhar
;
Pattanayak, Bhaskar
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
We explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 10(4) s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.
交大e-News第240期-交大CGI圍棋程式與台灣頂尖棋士之合作計畫
(2017-09-20)
國立交通大學秘書室
;
Secretariat
Intramolecular Locked Dithioalkylbithiophene-Based Semiconductors for High-Performance Organic Field-Effect Transistors
(2017-09-20)
Vegiraju, Sureshraju
;
Chang, Bo-Chin
;
Priyanka, Pragya
;
Huang, Deng-Yi
;
Wu, Kuan-Yi
New 3,3-dithioalkyl-2,2-bithiophene (SBT)-based small molecular and polymeric semiconductors are synthesized by end-capping or copolymerization with dithienothiophen-2-yl units. Single-crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completely planar, likely via S(alkyl)S(thiophene) intramolecular locks. Therefore, compared to semiconductors based on the conventional 3,3-dialkyl-2,2-bithiophene, the resulting SBT systems are planar (torsional angle <1 degrees) and highly -conjugated. Charge transport is investigated for solution-sheared films in field-effect transistors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging from approximate to 0.03 to 1.7 cm(2) V-1 s(-1). Transport difference within this family is rationalized by film morphology, as accessed by grazing incidence X-ray diffraction experiments.
Photostriction of CH3NH3PbBr3 Perovskite Crystals
(2017-09-20)
Wei, Tzu-Chiao
;
Wang, Hsin-Ping
;
Li, Ting-You
;
Lin, Chun-Ho
;
Hsieh, Ying-Hui
Organic-inorganic hybrid perovskite materials exhibit a variety of physical properties. Pronounced coupling between phonon, organic cations, and the inorganic framework suggest that these materials exhibit strong light-matter interactions. The photoinduced strain of CH3NH3PbBr3 is investigated using high-resolution and contactless in situ Raman spectroscopy. Under illumination, the material exhibits large blue shifts in its Raman spectra that indicate significant structural deformations (i.e., photostriction). From these shifts, the photostrictive coefficient of CH3NH3PbBr3 is calculated as 2.08 x 10(-8) m(2) W-1 at room temperature under visible light illumination. The significant photostriction of CH3NH3PbBr3 is attributed to a combination of the photovoltaic effect and translational symmetry loss of the molecular configuration via strong translation-rotation coupling. Unlike CH3NH3PbI3, it is noted that the photostriction of CH3NH3PbBr3 is extremely stable, demonstrating no signs of optical decay for at least 30 d. These results suggest the potential of CH3NH3PbBr3 for applications in next-generation optical micro-electromechanical devices.
Oxasmaragdyrins as New and Efficient Hole-Transporting Materials for High-Performance Perovskite Solar Cells
(2017-09-20)
Mane, Sandeep B.
;
Sutanto, Albertus Adrian
;
Cheng, Chih-Fu
;
Xie, Meng-Yu
;
Chen, Chieh-I
The high performance of the perovskite solar cells (PSCs) cannot be achieved without a layer of efficient hole-transporting materials (HTMs) to retard the charge recombination and transport the photogenerated hole to the counterelectrode. Herein, we report the use of boryl oxasmaragdyrins (SM01, SM09, and SM13), a family of aromatic core-modified expanded porphyrins, as efficient hole-transporting materials (HTMs) for perovskite solar cells (PSCs). These oxasmaragdyrins demonstrated complementary absorption spectra in the low-energy region, good redox reversibility, good thermal stability, suitable energy levels with CH3NH3PbI3 perovskite, and high hole mobility. A remarkable power conversion efficiency of 16.5% (V-oc= 1.09 V, J(sc) = 20.9 mA cm(-2), fill factor (FF) = 72%) is achieved using SM09 on the optimized PSCs device employing a planar structure, which is close to that of the state-of-the-art hole-transporting materials (HTMs), spiro-OMeTAD of 18.2% (V-oc = 1.07 V, J(sc) = 22.9 mA cm(-2), FF = 74%). In contrast, a poor photovoltaic performance of PSCs using SM01 is observed due to the interactions of terminal carboxylic acid functional group with CH3NH3PbI3.
Diammonium and Monoammonium Mixed-Organic-Cation Perovskites for High Performance Solar Cells with Improved Stability
(2017-09-20)
Lu, Jianfeng
;
Jiang, Liangcong
;
Li, Wei
;
Li, Feng
;
Pai, Narendra K.
Remarkable power conversion efficiencies (PCE) of metal-halide perovskite solar cells (PSCs) are overshadowed by concerns about their ultimate stability, which is arguably the prime obstacle to commercialization of this promising technology. Herein, the problem is addressed by introducing ethane-1,2-diammonium (+NH3(CH2)(2)NH3+, EDA(2+)) cations into the methyl ammonium (CH3NH3+, MA(+)) lead iodide perovskite, which enables, inter alia, systematic tuning of the morphology, electronic structure, light absorption, and photoluminescence properties of the perovskite films. Incorporation of < 5 mol% EDA(2+) induces strain in the perovskite crystal structure with no new phase formed. With 0.8 mol% EDA(2+), PCE of the MAPbI(3)-based PSCs (aperture of 0.16 cm(2)) improves from 16.7% +/- 0.6% to 17.9% +/- 0.4% under 1 sun irradiation, and fabrication of larger area devices (aperture 1.04 cm(2)) with a certified PCE of 15.2% +/- 0.5% is demonstrated. Most importantly, EDA(2+)/MA(+)-based solar cells retain 75% of the initial performance after 72 h of continuous operation at 50% relative humidity and 50 degrees C under 1 sun illumination, whereas the MAPbI(3) devices degrade by approximately 90% within only 15 h. This substantial improvement in stability is attributed to the steric and coulombic interactions of embedded EDA(2+) in the perovskite structure.
Direct infrared observation of hydrogen chloride anions in solid argon
(2017-09-21)
Huang, Tzu-Ping
;
Chen, Hui-Fen
;
Liu, Meng-Chen
;
Chin, Chih-Hao
;
Durrant, Marcus C.
To facilitate direct spectroscopic observation of hydrogen chloride anions (HCl-), electron bombardment of CH3Cl diluted in excess Ar during matrix deposition was used to generate this anion. Subsequent characterization were performed by IR spectroscopy and quantum chemical calculations. Moreover the band intensity of HCl fi decays slowly when the matrix sample is maintained in the dark for a prolonged time. High-level ab inito calculation suggested that HCl fi is only weakly bound. Atom-in-molecule charge analysis indicated that both atoms of HCl fi are negatively charged and the Cl atom is hypervalent. Published by AIP Publishing.
Remarkable nonlinear optical response of excess electron compounds: theoretically designed alkali-doped aziridine M-(C2NH5)(n)
(2017-09-21)
Li, Bo
;
Xu, Chao
;
Xu, Xuan
;
Zhu, Chaoyuan
;
Gu, Feng Long
Theoretically designed alkali-doped aziridine M-(C2NH5)(n) (M = Li, Na and K; n = 1, 2, 3, and 4) are investigated by density functional theory (DFT) and time-dependent TD-DFT. The interaction energies at optimized electronic structures indicate that alkali-doped aziridine are quite stable. The natural population analysis of charges on alkali atoms show that all positive and electronic transitions to LUMO orbitals are large, so that the designed compounds not only have electride features, but also have large flexible ligands. This leads to a high-performance nonlinear optical response (NLO) and this remarkable NLO response mainly comes from alkali atoms. By calculating the first hyperpolarizabilities for M-(C2NH5)(4) with M@ Calix[4] pyrrole for comparison, we demonstrate that enhancements of the NLO response of M-(C2NH5)(4) are 10 to 100 times larger than those of M@ Calix[ 4] pyrrole, and in particular, the largest first hyperpolarizability values of Na-(C2NH5)(4) is up to 3.4 x 10(6) (a. u.).
Spin filtering of a termination-controlled LSMO/Alq(3) heterojunction for an organic spin valve
(2017-09-21)
Lam, Tu-Ngoc
;
Huang, Yen-Lin
;
Weng, Ke-Chuan
;
Lai, Yu-Ling
;
Lin, Ming-Wei
La1-xSrxMnO3 (LSMO) is weLL known as an efficient spin-injection electrode in ferromagnetic organic hybrid-based organic spin valves (OSV). Herein, we examine the influence of three terminating Layers of LSMO fiLms (mixed-, MnO2-, and LaSrO- (LSO-) terminated) on the spin filter at the bottom interface of tri (8-hydroxyquinoLine) aluminum (ALq(3)) deposited on these substrates. Angle-dependent X-ray photoelectron spectra (XPS) demonstrated the presence of SrO segregation at the outermost Layer for three types of LSMO fiLms but in different amounts that might contribute to their magnetic properties. A weak surface coupling between LSMO and Alq(3) was obtained through a small increase of Mn L-edge X-ray magnetic circular dichroism (XMCD) but it does not vary the bulk magnetic properties of LSMO fiLms upon Alq(3) adsorption (LSMO/Alq(3)). The surface dipoles due to the interaction between LSMO fiLms and Alq(3) were found to be 0.5, 0.5, and 0.7 eV for the mixed-ter/Alq(3), MnO2-ter/Alq(3), and LSO-ter/Alq(3) interfaces, respectively. Our results indicate that the segregated SrO Layer Ways an important role in the surface electronic and magnetic properties at LSMO/Alq(3) interfaces, which contributes to a fundamental understanding of the spin injection and transport in LSMO-Alq(3) hybrid-based OSV devices.
SEMICONDUCTOR DEVICE FOR ULTRA-HIGH VOLTAGE OPERATION AND METHOD FOR FORMING THE SAME
(2017-09-21)
Chun-Yen CHANG
;
Chun-Hu CHENG
;
Yu-Pin LAN
A semiconductor device for ultra-high voltage (UHV) operation disclosed in the present invention includes a substrate having a normally-on channel, a negative capacitance material layer, an electrode, a source and a drain. The negative capacitance material layer is disposed over the substrate and capable of adjusting the threshold voltage of the semiconductor device so as to transform the normally-on channel into a normally-off channel and change the transistor characteristics of the semiconductor device from a depletion mode to an enhance mode. In addition, the semiconductor device also includes a gate dielectric layer made of high-k material between the negative capacitance material layer, a gate layer between the gate dielectric layer and the negative capacitance material layer and an ion implantation layer in the substrate under the gate. Furthermore, the aforementioned technical features or structures can be formed in a semiconductor device having a gate-recessed structure.
A Solution to Modeling Multilevel Confirmatory Factor Analysis with Data Obtained from Complex Survey Sampling to AvoidConflated Parameter Estimates
(2017-09-22)
Wu, Jiun-Yu
;
Lin, John J. H.
;
Nian, Mei-Wen
;
Hsiao, Yi-Cheng
;
教育研究所
The issue of equality in the between-and within-level structures in Multilevel Confirmatory Factor Analysis (MCFA) models has been influential for obtaining unbiased parameter estimates and statistical inferences. A commonly seen condition is the inequality of factor loadings under equal level-varying structures. With mathematical investigation and Monte Carlo simulation, this study compared the robustness of five statistical models including two model-based (a true and a mis-specified models), one design-based, and two maximum models (two models where the full rank of variance-covariance matrix is estimated in between level and within level, respectively) in analyzing complex survey measurement data with level-varying factor loadings. The empirical data of 120 3rd graders' (from 40 classrooms) perceived Harter competence scale were modeled using MCFA and the parameter estimates were used as true parameters to perform the Monte Carlo simulation study. Results showed maximum models was robust to unequal factor loadings while the design-based and the miss-specified model-based approaches produced conflated results and spurious statistical inferences. We recommend the use of maximum models if researchers have limited information about the pattern of factor loadings and measurement structures. Measurement models are key components of Structural Equation Modeling (SEM); therefore, the findings can be generalized to multilevel SEM and CFA models. Mplus codes are provided for maximum models and other analytical models.
Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors
(2017-09-25)
Chiang, Hsiao-Cheng
;
Chang, Ting-Chang
;
Liao, Po-Yung
;
Chen, Bo-Wei
;
Tsao, Yu-Ching
This letter investigates the effect of negative bias temperature stress (NBTS) on amorphous InGaZnO4 thin film transistors with copper electrodes. After 2000 s of NBTS, an abnormal subthreshold swing and on-current (I-on) degradation is observed. The recovery of the Id-Vg curve after either annealing or positive bias temperature stress suggests that there are some native mobile copper ions in the active layer. Both the existence of copper and the degradation mechanism can be confirmed by AC stress with different frequencies and by transmission electron microscope energy-dispersive X-ray spectroscopy analysis. Published by AIP Publishing.
A structural health monitoring system based on multifractal detrended cross-correlation analysis
(2017-09-25)
Lin, Tzu-Kang
;
Chien, Yi-Hsiu
;
土木工程學系
;
Department of Civil Engineering
In recent years, multifractal-based analysis methods have been widely applied in engineering. Among these methods, multifractal detrended cross-correlation analysis (MFDXA), a branch of fractal analysis, has been successfully applied in the fields of finance and biomedicine. For its great potential in reflecting the subtle characteristic among signals, a structural health monitoring (SHM) system based on MFDXA is proposed. In this system, damage assessment is conducted by exploiting the concept of multifractal theory to quantify the complexity of the vibration signal measured from a structure. According to the proposed algorithm, the damage condition is first distinguished by multifractal detrended fluctuation analysis. Subsequently, the relationship between the q-order, q-order detrended covariance, and length of segment is further explored. The dissimilarity between damaged and undamaged cases is visualized on contour diagrams, and the damage location can thus be detected using signals measured from different floors. Moreover, a damage index is proposed to efficiently enhance the SHM process. A seven-story benchmark structure, located at the National Center for Research on Earthquake Engineering (NCREE), was employed for an experimental verification to demonstrate the performance of the proposed SHM algorithm. According to the results, the damage condition and orientation could be correctly identified using the MFDXA algorithm and the proposed damage index. Since only the ambient vibration signal is required along with a set of initial reference measurements, the proposed SHM system can provide a lower cost, efficient, and reliable monitoring process.
Solving Lauricella string scattering amplitudes through recurrence relations
(2017-09-26)
Lai, Sheng-Hong
;
Lee, Jen-Chi
;
Lee, Taejin
;
Yang, Yi
;
電機學院
We show that there exist in finite number of recurrence relations valid for all energies among the open bosonic string scattering amplitudes (SSA) of three tachyons and one arbitrary string state, or the Lauricella SSA. Moreover, these in finite number of recurrence relations can be used to solve all the Lauricella SSA and express them in terms of one single four tachyon amplitude. These results extend the solvability of SSA at the high energy, fixed angle scattering limit and those at the Regge scattering limit discovered previously to all kinematic regimes.
Identification of neuraminidase inhibitors against dual H274Y/I222R mutant strains
(2017-09-26)
Hsu, Kai-Cheng
;
Hung, Hui-Chen
;
HuangFu, Wei-Chun
;
Sung, Tzu-Ying
;
Lin, Tony Eight
Influenza is an annual seasonal epidemic that has continually drawn public attentions, due to the potential death toll and drug resistance. Neuraminidase, which is essential for the spread of influenza virus, has been regarded as a valid target for the treatment of influenza infection. Although neuraminidase drugs have been developed, they are susceptible to drug-resistant mutations in the sialic-binding site. In this study, we established computational models (site-moiety maps) of H1N1 and H5N1 to determine properties of the 150-cavity, which is adjacent to the drug-binding site. The models reveal that hydrogen-bonding interactions with residues R118, D151, and R156 and van der Waals interactions with residues Q136, D151, and T439 are important for identifying 150-cavitiy inhibitors. Based on the models, we discovered three new inhibitors with IC50 values <10 mu M that occupies both the 150-cavity and sialic sites. The experimental results identified inhibitors with similar activities against both wild-type and dual H274Y/I222R mutant neuraminidases and showed little cytotoxic effects. Furthermore, we identified three new inhibitors situated at the sialic-binding site with inhibitory effects for normal neuraminidase, but lowered effects for mutant strains. The results suggest that the new inhibitors can be used as a starting point to combat drug-resistant strains.
Interplay of Nanoscale, Hybrid P3HT/ZTO Interface on Optoelectronics and Photovoltaic Cells
(2017-09-27)
Lai, Jian-Jhong
;
Li, Yu-Hsun
;
Feng, Bo-Rui
;
Tang, Shiow-Jing
;
Jian, Wen-Bin
Photovoltaic effects in poly(3-hexylthiophene-2,5-diyl) (P3HT) have attracted much attention recently. Here, natively p-type doped P3HT nanofibers and n-type doped zinc tin oxide (ZTO) nanowires are used for making not only field-effect transistors (FETs) but also p-n nanoscale diodes. The hybrid P3HT/ZTO p-n heterojunction shows applications in many directions, and it also facilitates the investigation of photoelectrons and photovoltaic effects on the nanoscale. As for applications, the heterojunction device shows a simultaneously high on/off ratio of n-and p-type FETs, gatable p-n junction diodes, tristate buffer devices, gatable photodetectors, and gatable solar cells. On the other hand, P3HT nanofibers are taken as a photoactive layer and the role played by the p-n heterojunction in the photoelectric and photovoltaic effects is investigated. It is found that the hybrid P3HT/ZTO p-n heterojunction assists in increasing photocurrents and enhancing photovoltaic effects. Through the controllable gating of the heterojunction, we can discuss the background mechanisms of photocurrent generation and photovoltaic energy harvesting.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
(2017-09-28)
Chao-Hsin CHIEN
;
Chi-Wen LIU
;
Chen-Han CHOU
A semiconductor device including a Fin FET device includes a fin structure extending in a first direction and protruding from a substrate layer. The fin structure includes a bulk stressor layer formed on the substrate layer and a channel layer disposed over the bulk stressor layer. An oxide layer is formed on the substrate layer extending away from the channel layer. A source-drain (SD) stressor structure is disposed on sidewalls of the channel layer over the oxide layer. A gate stack including a gate electrode layer and a gate dielectric layer covers a portion of the channel layer and extends in a second direction perpendicular to the first direction.
Intermetallic compounds in 3D integrated circuits technology: a brief review
(2017-09-28)
Annuar, Syahira
;
Mahmoodian, Reza
;
Hamdi, Mohd
;
Tu, King-Ning
;
材料科學與工程學系
The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by throughSi- via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.
Enantiospecific Synthesis of Imidazoquinazolin-2-ones via Base-Catalyzed Tandem Cyclization
(2017-09-29)
Kumar, Sunil
;
Ho, Pei-Heng
;
Barve, Indrajeet J.
;
Sun, Chung-Ming
;
應用化學系
A facile protocol for the enantiospecific synthesis of novel (S)-3-substituted imidazo[2,l-b]quinazoline-2-ones via tandem reaction of substituted (S)-3-amino-4-aminomethylbenzoates and cyanogen bromide under basic conditions is explored. This tandem process involves addition reaction of substituted (S)-3-amino-4-aminomethylbenzoates to CNBr to yield 2-imino tetrahydroquinazoline carboxylate intermediates followed by insitu intramolecular aminolysis to afford the triheterocyclic imidazo[2,l-b]quinazoline-2-ones in good yields and high enantiomeric purity.