瀏覽 的方式： 作者 Hwang, Jiunn-Ren
顯示 1 到 6 筆資料，總共 6 筆
| 公開日期 | 標題 | 作者 |
| 2007 | Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperature | Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming; Yeh, Ta-Ching; Cheng, Hui-Wen; Chen, Hung-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang; 電信工程研究所; Institute of Communications Engineering |
| 2007 | Discrete dopant fluctuated 20nm/15nm-gate planar CMOS | Yang, Fu-Liang; Hwang, Jiunn-Ren; Chen, Hung-Ming; Shen, Jeng-Jung; Yu, Shao-Ming; Li, Yiming; Tang, Denny D.; 電信工程研究所; Institute of Communications Engineering |
| 1-六月-2008 | Discrete dopant fluctuations in 20-nm/15-nm-gate planar CMOS | Li, Yiming; Yu, Shao-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang; 資訊工程學系; 電信工程研究所; Department of Computer Science; Institute of Communications Engineering |
| 2006 | Electrical characteristic fluctuations in sub-45nm CMOS devices | Yang, Fu-Liang; Hwang, Jiunn-Ren; Li, Yiming; 電信工程研究所; Institute of Communications Engineering |
| 2007 | Novel strained CMOS devices with STI stress buffer layers | Chen, Hung-Ming; Hwang, Jiunn-Ren; Li, Yiming; Yang, Fu-Liang; 電信工程研究所; Institute of Communications Engineering |
| 1-四月-2008 | Strained CMOS devices with shallow-trench-isolation stress buffer layers | Li, Yiming; Chen, Hung-Ming; Yu, Shao-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang; 資訊工程學系; 電信工程研究所; Department of Computer Science; Institute of Communications Engineering |
