交大學刊;;Science Bulletin National Chiao-Tung University

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Temperature Dependence of Ionization Rates in Ge
(交大學刊編輯委員會, 1971-04)
戴寶通
;
張俊彥
;
B.T.Dai
;
C.Y.Chang
The ionization rates of eletron and hole in germanium have been measured from 200°K to 300°K and were fit to the modified Baraff theory, in which the optical phononmean free path is temperature dependent and can be fit to the formula:λ=λ0 tanhEp/2KT, where Ep is the average optical phonon energy. The asymptotic optical phonon mean free paths wherin deduced from experiments are λ=73±4Å and λoh=84±4Å for electron and hole respectively which are in good agreement with that of Miller's data obtained at room temperature. A simplified approach to calculate the ionization rates from the photomultiplication data has also been deduced for the one sided abrupt junction.