| 標題: | 下一世代鍺基板電子元件 Next Generation Ge-Based Electronic Devices |
| 作者: | 荊鳳德 CHIN ALBERT 國立交通大學電子工程學系及電子研究所 |
| 公開日期: | 2009 |
| 官方說明文件#: | NSC98-2221-E009-163-MY3 |
| URI: | http://hdl.handle.net/11536/101552 https://www.grb.gov.tw/search/planDetail?id=1902770&docId=315253 |
| Appears in Collections: | Research Plans |
- 下一世代鍺基板電子元件 / 荊鳳德;CHIN ALBERT
- 下一世代鍺基板電子元件 / 荊鳳德;CHIN ALBERT
- A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step / Lai, Wei-Ting;Yang, Kuo-Ching;Hsu, Ting-Chia;Liao, Po-Hsiang;George, Thomas
- Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors / Lai, Wei-Ting;Yang, Kuo-Ching;Liao, Po-Hsiang;George, Tom;Li, Pei-Wen
- NiSiGe nanocrystals for nonvolatile memory devices / Hu, Chih-Wei;Chang, Ting-;Tu, Chun-Hao;Chiang, Cheng-Neng;Lin, Chao-Cheng
- Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition / Kuo, Po-Yi;Chao, Tien-Sheng;Huang, Jyun-Siang;Lei, Tan-Fu
- High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects / Kuo, Ming-Hao;Lee, Meng-Chun;Lin, Horng-Chih;George, Tom;Li, Pei-Wen
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