成長於非極化氮化鎵之寬能隙材料及光電元件研究---子計畫三：功能性高發光效率氮化鎵發光元件

Abstract

本計劃主要目的在於使用非極性氮化鎵材料研發功能性高功率發光二極體以及單 光子光源。我們在三年的計畫中搭配其他子計畫將發展包括：a-plane 氮化鎵的磊晶技 術、表面粗化製程、氮化鎵奈米柱的蝕刻、表面電漿共振及單光子光源等技術。其中， a-plane 氮化鎵(即非極性氮化鎵材料)磊晶技術可以將原本c-plane 氮化鎵材料中的壓電 場效應(Quantum Confine Stark Effect, QCSE)減少，進而使發光效率增強且具有特定之極 化方向。表面粗化技術可以增加元件之光萃取效率。利用金屬奈米罩與奈米柱蝕刻技術 製作奈米柱LED 則可增加量子效率與光取出效率。利用表面電漿共振技術更進一步的 將發光效率倍增。同時利用製作奈米柱的技術，結合製作微共振腔的能力在非極性氮化 鎵材料研發單光子發射光源。結合上述技術，期可以製作應用於半導體照明、顯示器面 板等所需的高效能發光元件以及可在室溫操作的具穩定極化方向的單光子發射光源。

The main objective of the project is to investigate and develop functional high efficiency light emitting diodes (LEDs) and single photon emitters by using non-polar GaN materials. Within the three years, we will cooperate with other sub-projects to develop a-plane GaN epitaxy, surface roughing, the etching of GaN nanorods, surface plasmon and single photon emitters to fulfill high efficiency functional non-polar GaN-based light emitters. Conventional c-plane GaN multiple quantum wells suffer from the inherited spontaneous and piezoelectric field which separates the electron and hole wave function spatially and leads to low emission efficiency. However, a-plane GaN (non-polar GaN materials) can eliminate Quantum Confine Stark Effect to improve the light emission efficiency internally and provide a unique specific polarized output light emission functions. In addition, with surface roughing, the light extraction efficiency can be increased. The nanorod LEDs fabricated using nano-mask emits high output power due to improved internal quantum efficiency and light extraction efficiency. Using surface plasmon technology makes the efficiency increased double and achieves single photon emitting source. Based on the fabrication capability of non-polar GaN-based nanorod, we can combine the micro-cavity to develop a novel functional polarization stabilized single photon emitter. By combining the listed process techniques, the high efficiency functional LEDs applied for ambient lighting and TFT-LCD backlight applications and functional polarization stabilized single photon emitter operated at room temperature can be achieved. 表