標題: Independently-controlled-gate SRAM
作者: Chuang Ching-Te
Chen Yin-Nien
Hsieh Chien-Yu
Fan Ming-Long
Hu Pi-Ho
Su Pin
公開日期: 6-五月-2014
摘要: The present invention provides an IG 7T FinFET SRAM, which adopts independently-controlled-gate super-high-VT FinFETs to achieve a stacking-like property, whereby to eliminate the read disturb and half-select disturb. Further, the present invention uses keeper circuits and read control voltage to reduce leakage current of the bit lines during read. Furthermore, the present invention can effectively overcome the problem of the conventional 6T SRAM that is likely to have read errors at low operation voltage.
官方說明文件#: G11C011/00
URI: http://hdl.handle.net/11536/104386
專利國: USA
專利號碼: 08717807
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