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dc.contributor.authorChen Kuan-Nengen_US
dc.contributor.authorHsu Sheng-Yaoen_US
dc.date.accessioned2014-12-16T06:13:59Z-
dc.date.available2014-12-16T06:13:59Z-
dc.date.issued2013-08-13en_US
dc.identifier.govdocH01L023/34zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104452-
dc.description.abstractThe present invention discloses a bonding method for a three-dimensional integrated circuit and the three-dimensional integrated circuit thereof. The bonding method comprises the steps of: providing a substrate; depositing a film layer on the substrate; providing a light source to light onto the film layer to form a graphic structure; forming a metal co-deposition layer by a first metal and a second metal that are co-deposited on the film layer; providing a first integrated circuit having the substrate, the film layer and the metal co-deposition layer sequentially; providing a second integrated circuit that having the metal co-deposition layer, the film layer and the substrate sequentially; and the first integrated circuit is bonded with the second integrated circuit at a predetermined temperature to form a three-dimensional integrated circuit.zh_TW
dc.language.isozh_TWen_US
dc.titleBonding method for three-dimensional integrated circuit and three-dimensional integrated circuit thereofzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08508041zh_TW
Appears in Collections:Patents


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