包含暫時接合及自底向上矽穿孔成型之前瞻三維積體電路製程整合及技術研究

Abstract

成本問題是制約三維積體電路(3D IC)技術進一步商業化應用的最主要因素，因此，本論文研究了三維積體電路關鍵技術進一步改進的可能性，以低成本(low cost)、高產能(high throughput)為目標，在不影響良率的前提下，提出了一套具有滿足量產要求的改進製程。 具體而言，本論文運用新穎的無機黏著劑磷酸二氫鋁作為暫時接合材料，其接合溫度為150-200°C，解接合溫度為300-350°C。此晶圓暫時接合製程技術已通過可靠度測試，能成功用於晶圓薄化(wafer thinning)、晶圓操控(wafer handling)及其它後續製程。相較於之前的研究，磷酸二氫鋁接合劑具有低成本、高效能和高兼容性等優點。 另一方面，基於開發成功的新型暫時接合技術，本論文在矽穿孔(TSV)的領域提出了優化的晶圓級自底向上(bottom-up)矽穿孔成型技術。此技術使用耦合電漿深反應式離子蝕刻及高分子聚合物顯影，最後完成自底向上矽穿孔電鍍。相較於傳統製程，該方法的優點是電鍍不受深寬比限制、無需專用昂貴商用機台也能完成製程等。

Cost is the primary issue that limits the commercial mass production of three-dimensional integrated circuit technologies. Therefore, based on the process improvement, a set of advanced technique process flow has been proposed to achieve low cost and high throughput without affecting the yield. Specifically, a novel inorganic material of monoaluminium phosphate was selected as the adhesive for temporary wafer bonding with bonding temperature ranging from 150°C to 200°C, and de-bonding temperature from 300°C to 350°C. After reliability tests, this new temporary method can be used in wafer thinning, wafer handling and other downstream processes. Other than traditional technologies, this new method using monoaluminium phosphate owns some advantages such as low cost, high throughput and high compatibility. Furthermore, an advanced bottom-up TSV formation technique has been realized with ICP-DRIE etching, polymer lithography, and then bonding. After that, the TSVs were filled by bottom-up electroplating. Compared with traditional methods, the advanced process benefited with the independent TSV aspect ratio with electroplating process and no need for expensive specific plating machine.