| 標題: | Silicon controlled rectifier for the electrostatic discharge protection |
| 作者: | Ker Ming-Dou Lin Kun-Hsien |
| 公開日期: | 2-六月-2009 |
| 摘要: | The present invention relates to an SCR (Silicon Controlled Rectifier) for the ESD (electrostatic discharge) protection comprising two terminal electrodes of a first electrode and a second electrode, a PMOS, an NMOS and an SCR structure. By utilizing an embedded SCR, a whole-chip ESD protection circuit design can be obtained. The present invention is suitable for IC products, and for applications by IC design industries and IC foundry industries. |
| 官方說明文件#: | H02H009/00 |
| URI: | http://hdl.handle.net/11536/104745 |
| 專利國: | USA |
| 專利號碼: | 07542253 |
| 顯示於類別： | 專利資料 |
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- Low-Leakage Bidirectional SCR With Symmetrical Trigger Circuit for ESD Protection in 40-nm CMOS Process / Altolaguirre, Federico A.;Ker, Ming-Dou
- Quad-SCR Device for Cross-Domain ESD Protection / Altolaguirre, Federico A.;Ker, Ming-Dou
- Study on the ESD-Induced Gate-Oxide Breakdown and the Protection Solution in 28nm High-K Metal-Gate CMOS Technology / Lin, Chun-Yu;Ker, Ming-Dou;Chang, Pin-Hsin;Wang, Wen-Tai
- Silicon controlled rectifier for the electrostatic discharge protection / Ker, Ming-Dou;Lin, Kun-Hsien
- Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier / Ker;Ming-Dou;Hsu;Kuo-Chun
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