標題: Charge pump circuit suitable for low-voltage process
作者: Ker
Ming-Dou
Tsai
Chia-Sheng
公開日期: 5-十二月-2006
摘要: The present invention discloses a charge pump circuit suitable for a low-voltage process. The charge pump circuit is composed of stages of the voltage amplifying circuits connected each other, and the operation of two adjacent stages of voltage amplifying circuit is controlled by two opposite set of the timing signals. Each stage of the voltage amplifying circuit has a coupled pair of a first complementary MOS (CMOS) transistor and a second CMOS transistor switching in accordance with a timing signal and an inverse timing signal inputted into the first and second capacitors. Then, two diode devices guide charges to next stage, and a voltage higher than the integrated circuit voltage source is outputted. The present invention has advantage of high pumping gain, and the reliability issue of the gate oxide layer in the low-voltage process can be also solved.
官方說明文件#: G05F001/10
G05F003/02
URI: http://hdl.handle.net/11536/104799
專利國: USA
專利號碼: 07145382
顯示於類別:專利資料


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