標題: APPLICATION CIRCUIT AND OPERATION METHOD OF SEMICONDUCTOR DEVICE
作者: Shirota Riichiro
Watanabe Hiroshi
公開日期: 3-一月-2013
摘要: An application circuit and an operation method of a semiconductor device are provided. A leakage current among a control gate diffusion layer, a source diffusion layer and a drain is reduced by adjusting biases applied on a double well region, so as to reduce the product cost and improve the accuracy of a battery-less electronic timer that uses the semiconductor device.
官方說明文件#: H01L029/788
G11C016/02
URI: http://hdl.handle.net/11536/105092
專利國: USA
專利號碼: 20130003466
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