標題: | DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF |
作者: | CHANG EDWARD YI HSU HENG-TUNG |
公開日期: | 26-四月-2012 |
摘要: | A manufacturing method of a device having series-connected HEMTs is presented. Transistors are formed on a substrate and integratedly serial-connected as an integrated device by interconnection wires. Therefore, the voltage of the device is the sum of the voltages across each transistors so that the device can have high breakdown voltage. |
官方說明文件#: | H01L029/778 H01L021/335 |
URI: | http://hdl.handle.net/11536/105192 |
專利國: | USA |
專利號碼: | 20120098037 |
顯示於類別: | 專利資料 |