標題: DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
作者: CHANG EDWARD YI
HSU HENG-TUNG
公開日期: 26-四月-2012
摘要: A manufacturing method of a device having series-connected HEMTs is presented. Transistors are formed on a substrate and integratedly serial-connected as an integrated device by interconnection wires. Therefore, the voltage of the device is the sum of the voltages across each transistors so that the device can have high breakdown voltage.
官方說明文件#: H01L029/778
H01L021/335
URI: http://hdl.handle.net/11536/105192
專利國: USA
專利號碼: 20120098037
顯示於類別:專利資料


文件中的檔案:

  1. 20120098037.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。