標題: DISTURB-FREE STATIC RANDOM ACCESS MEMORY CELL
作者: Chuang Ching-Te
Yang Hao-I
Lin Jihi-Yu
Yang Shyh-Chyi
Tu Ming-Hsien
Hwang Wei
Jou Shyh-Jye
Lee Kun-Ti
Li Hung-Yu
公開日期: 2-六月-2011
摘要: A disturb-free static random access memory cell includes: a latch circuit having a first access terminal and a second access terminal; a first switching circuit having a first bit transferring terminal coupled to the first access terminal, a first control terminal coupled to a first write word line, and a second bit transferring terminal; a second switching circuit having a third bit transferring terminal coupled to the second access terminal, a second control terminal coupled to a second write word line, and a fourth bit transferring terminal coupled to the second bit transferring terminal; a third switching circuit having a fifth bit transferring terminal coupled to the fourth bit transferring terminal, a third control terminal coupled to a word line, and a sixth bit transferring terminal coupled to a bit line; and a sensing amplifier coupled to the bit line, for determining a bit value appearing at the bit line.
官方說明文件#: G11C007/10
G11C007/00
URI: http://hdl.handle.net/11536/105302
專利國: USA
專利號碼: 20110128796
顯示於類別:專利資料


文件中的檔案:

  1. 20110128796.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。