High Mobility InGaZnO Thin Film Transistor Using Narrow-Bandgap Titanium-Oxide Semiconductor as Channel Capping Layer

標題:	High Mobility InGaZnO Thin Film Transistor Using Narrow-Bandgap Titanium-Oxide Semiconductor as Channel Capping Layer
作者:	Hsu, H. H. Chiou, P. Chiu, Y. C. Yen, S. S. Chang, C. Y. Cheng, C. H. 電機工程學系 Department of Electrical and Computer Engineering
公開日期:	1-一月-2014
摘要:
URI:	http://hdl.handle.net/11536/124922
ISBN:	978-1-4799-5406-3
ISSN:	1548-3770
期刊:	2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
起始頁:	107
結束頁:	108
顯示於類別：	會議論文