DESIGN OF 2xV(DD) LOGIC GATES WITH ONLY 1xV(DD) DEVICES IN NANOSCALE CMOS TECHNOLOGY

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DC Field	Value	Language
dc.contributor.author	Chiu, Po-Yen	en_US
dc.contributor.author	Ker, Ming-Dou	en_US
dc.date.accessioned	2015-07-21T08:31:00Z	-
dc.date.available	2015-07-21T08:31:00Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.isbn	978-1-4799-1166-0	en_US
dc.identifier.issn	2164-1676	en_US
dc.identifier.uri	http://hdl.handle.net/11536/125063	-
dc.description.abstract	The novel 2xV(DD) NOT, NAND, and NOR logic gates have been designed and implemented in a nanoscale CMOS process with only 1xV(DD) devices. With the proposed dynamic source bias technique, the logic gates can be designed to have 2xV(DD) tolerant capability. Thus, the new 2xV(DD) logic gates can be operated under 2xV(DD) voltage environment without suffering the gate-oxide reliability issue.	en_US
dc.language.iso	en_US	en_US
dc.title	DESIGN OF 2xV(DD) LOGIC GATES WITH ONLY 1xV(DD) DEVICES IN NANOSCALE CMOS TECHNOLOGY	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 IEEE 26TH INTERNATIONAL SOC CONFERENCE (SOCC)	en_US
dc.citation.spage	33	en_US
dc.citation.epage	36	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000351736000001	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper