Full metadata record
DC FieldValueLanguage
dc.contributor.authorHsu, Ching-Hsiangen_US
dc.contributor.authorChang, Hsun-Juien_US
dc.contributor.authorYu, Hung-Weien_US
dc.contributor.authorHong-Quan Nguyenen_US
dc.contributor.authorMa, Jer-Shenen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2015-07-21T08:30:58Z-
dc.date.available2015-07-21T08:30:58Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-4799-5760-6en_US
dc.identifier.issnen_US
dc.identifier.urihttp://hdl.handle.net/11536/125103-
dc.description.abstract-Au-free, fully Cu-metallized InGaP/InGaAs/Ge triple-junction solar cells using Pd/Ge/Cu as front contact and Pt/Ti/Pt/Cu/Cr as back contact were fabricated and the results are reported for the first time. From the specific contact resistance measurement, these Cu-metallized ohmic contacts have low contact resistance in the order of 10(-6) Omega-cm(2). AES and TEM results clearly show the formation mechanisms of the Cu-metallization ohmic structures, for Pd/Ge/Cu contact, it was due to the formation of Ge diffusion into the GaAs layer, and for the Pt/Ti/Pt/Cu/Cr contact, it was due to high work function of Pt layer, these copper metallized ohmic contacts were quite stable even after 310 degrees C annealing. The I-V curves of the Cu-metallized InGaP/InGaAs/Ge triple-junction solar cells showed similar electrical characteristics to the solar cells with Au-metallized triple junction solar cell. Overall, the Pd/Ge/Cu and Pt/Ti/Pt/Cu ohmic contacts have been successfully applied to the InGaP/InGaAs/Ge triple-junction solar cells and demonstrated excellent performance.en_US
dc.language.isoen_USen_US
dc.subjectCopper-metallizationen_US
dc.subjectIII-V solar cellen_US
dc.subjectlow-costen_US
dc.titleGold-Free Cu-Metallized III-V Solar Cellen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)en_US
dc.citation.spage336en_US
dc.citation.epage338en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000353960000086en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper