標題: | Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells |
作者: | Hsu, Ching-Hsiang Chang, Edward Yi Chang, Hsun-Jui Yu, Hung-Wei Hong Quan Nguyen Chung, Chen-Chen Maa, Jer-Shen Pande, Krishna 材料科學與工程學系 照明與能源光電研究所 電子工程學系及電子研究所 Department of Materials Science and Engineering Institute of Lighting and Energy Photonics Department of Electronics Engineering and Institute of Electronics |
關鍵字: | III-V concentrator solar cell;copper metallization;ohmic contact;low cost |
公開日期: | 1-十二月-2014 |
摘要: | Copper contacts and interconnects were developed for GaAs and Ge for low-cost solar cell application. In addition, thermally annealed Pd/Ge and Pt/Ti/Pt metallizations were created for ohmic contacts to n-GaAs and p-Ge with contact resistance of 4.4 x 10(-6) and 6.9 x 10(-6) Omega cm(2), respectively. Utilizing such metallization structure for InGaP/InGaAs/Ge triple-junction device structure solar cells were fabricated that delivered conversion efficiency of 23.11%, which is average efficiency for the above device structure. |
URI: | http://dx.doi.org/10.1109/LED.2014.2361923 http://hdl.handle.net/11536/123865 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2014.2361923 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 35 |
Issue: | 12 |
起始頁: | 1275 |
結束頁: | 1277 |
顯示於類別: | 期刊論文 |