標題: | The reliability study of III-V solar cell with copper based contacts |
作者: | Hsu, Ching-Hsiang Chang, Edward Yi Chang, Hsun-Jui Maa, Jer-Shen Pande, Krishna 材料科學與工程學系 照明與能源光電研究所 電子工程學系及電子研究所 Department of Materials Science and Engineering Institute of Lighting and Energy Photonics Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Reliability;III-V concentrator solar cell;Copper metallization;Low cost |
公開日期: | 1-十二月-2015 |
摘要: | The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10(-6) Omega cm(2). The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 degrees C) and a high DC current (6.5 x 10(-4) mA/mu m(2)) stress test. Overall, the solar cell adopting these Cu-based contacts remained quite stable and demonstrated excellent performances after these reliability tests. (C) 2015 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.sse.2015.09.017 http://hdl.handle.net/11536/128368 |
ISSN: | 0038-1101 |
DOI: | 10.1016/j.sse.2015.09.017 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 114 |
起始頁: | 174 |
結束頁: | 177 |
顯示於類別: | 期刊論文 |