The reliability study of III-V solar cell with copper based contacts

doi:10.1016/j.sse.2015.09.017

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, Ching-Hsiang	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.contributor.author	Chang, Hsun-Jui	en_US
dc.contributor.author	Maa, Jer-Shen	en_US
dc.contributor.author	Pande, Krishna	en_US
dc.date.accessioned	2015-12-02T02:59:34Z	-
dc.date.available	2015-12-02T02:59:34Z	-
dc.date.issued	2015-12-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.sse.2015.09.017	en_US
dc.identifier.uri	http://hdl.handle.net/11536/128368	-
dc.description.abstract	The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10(-6) Omega cm(2). The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 degrees C) and a high DC current (6.5 x 10(-4) mA/mu m(2)) stress test. Overall, the solar cell adopting these Cu-based contacts remained quite stable and demonstrated excellent performances after these reliability tests. (C) 2015 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Reliability	en_US
dc.subject	III-V concentrator solar cell	en_US
dc.subject	Copper metallization	en_US
dc.subject	Low cost	en_US
dc.title	The reliability study of III-V solar cell with copper based contacts	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.sse.2015.09.017	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	114	en_US
dc.citation.spage	174	en_US
dc.citation.epage	177	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	照明與能源光電研究所	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Lighting and Energy Photonics	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000363193300031	en_US
dc.citation.woscount	0	en_US
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