標題: The reliability study of III-V solar cell with copper based contacts
作者: Hsu, Ching-Hsiang
Chang, Edward Yi
Chang, Hsun-Jui
Maa, Jer-Shen
Pande, Krishna
材料科學與工程學系
照明與能源光電研究所
電子工程學系及電子研究所
Department of Materials Science and Engineering
Institute of Lighting and Energy Photonics
Department of Electronics Engineering and Institute of Electronics
關鍵字: Reliability;III-V concentrator solar cell;Copper metallization;Low cost
公開日期: 1-Dec-2015
摘要: The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10(-6) Omega cm(2). The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 degrees C) and a high DC current (6.5 x 10(-4) mA/mu m(2)) stress test. Overall, the solar cell adopting these Cu-based contacts remained quite stable and demonstrated excellent performances after these reliability tests. (C) 2015 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2015.09.017
http://hdl.handle.net/11536/128368
ISSN: 0038-1101
DOI: 10.1016/j.sse.2015.09.017
期刊: SOLID-STATE ELECTRONICS
Volume: 114
起始頁: 174
結束頁: 177
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