| 標題: | 新穎一體成型且可自我對準之鍺奈米金氧半電晶體研究 Self-Aligned Ge/SiO2/Ge Insta Metal-Oxide-Semiconductor Devices |
| 作者: | 李佩雯 LI PEI-WEN 國立交通大學電子工程學系及電子研究所 |
| 公開日期: | 2015 |
| 官方說明文件#: | MOST104-2221-E009-064 |
| URI: | http://hdl.handle.net/11536/129915 https://www.grb.gov.tw/search/planDetail?id=11576638&docId=470113 |
| 顯示於類別： | 研究計畫 |
- Gate-stack engineering for self-aligned Ge-gate/SiO2/SiGe-channel Insta-MOS devices / Lai, Wei-Ting;Yang, Kuo-Ching;Liao, Po-Hsiang;George, Thomas;Li, Pei-Wen
- A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step / Lai, Wei-Ting;Yang, Kuo-Ching;Hsu, Ting-Chia;Liao, Po-Hsiang;George, Thomas
- Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors / Lai, Wei-Ting;Yang, Kuo-Ching;Liao, Po-Hsiang;George, Tom;Li, Pei-Wen
- Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors / Zhang, Xingui;Guo, Huaxin;Lin, Hau-Yu;Cheng, Chao-Ching;Ko, Chih-Hsin
- 利用超高真空化學分子磊晶系統成長單晶矽鍺源/汲極的正型金氧半電晶體之相關製程研究 / 黃祥瑾;Huang Hsiang-Jen;張俊彥;Chang Chun-Yen
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