| 標題: | 亳微米元件電子束曝光精確度之研究 An Improrement of He Electron Beam Exposure Accruacy |
| 作者: | 中村一光 張俊 交通大學電子研究所 |
| 關鍵字: | ; |
| 公開日期: | 1993 |
| 摘要: | |
| 官方說明文件#: | NSC82-0404-E009-202 |
| URI: | https://www.grb.gov.tw/search/planDetail?id=45897&docId=6590 http://hdl.handle.net/11536/132157 |
| Appears in Collections: | Research Plans |
- Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications / Liu, PT;Chang, TC;Tsai, TM;Lin, ZW;Chen, CW
- 半導體微影奈米尺寸的穩定性控制 / 郭養國;Kuo, Yang-Kuao;朝春光;Chao, Chuen-Guang
- HOLOGRAM ENHANCEMENT IN PHOTOREFRACTIVE MEDIA / YEH, PC;GU, C;CHENG, CJ;HSU, KY
- Enhancement on forming complex three dimensional microstructures by a double-side multiple partial exposure method / Chung, Junwei;Hsu, Wensyang
- 電子束微影技術的鄰近效應研究 / 方禎祥;Chen-Hsiang Fang;黃遠東;林俊宏;Yang-Tung Huang
- Experimental characterization of phenanthrenequinone-doped poly(methyl methacrylate) photopolymer for volume holographic storage / Hsu, KY;Lin, SH;Hsiao, YN;Whang, WT
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