Novel Ultra-Low Power RRAM with Good Endurance and Retention

Abstract

We report high performance RRAM of ultra-low 4 mu W set power (-3.5 mu A at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4x10(5) at 85 degrees C, good 10(6) cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.