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dc.contributor.authorYu, Yung-Huien_US
dc.contributor.authorWang, Po-Hanen_US
dc.contributor.authorTsai, Shang-Jenen_US
dc.contributor.authorChen, Tien-Fuen_US
dc.date.accessioned2017-04-21T06:48:46Z-
dc.date.available2017-04-21T06:48:46Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-6275-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/136086-
dc.description.abstractThe ever-increasing transistor threshold-voltage (Vth) variation caused by process technologies shrink brings the performance and reliability issues in SRAM cells. To keep power limitations, scaling down the supply voltage is inevitable in mobile devices and future chips. However, caches become susceptible even fail in low voltages, and the distribution of access latencies increases in new technology nodes. To deal with the respectable power of SRAM in modern processors, the memory reliability wall poses a major challenge in cache design nowadays and continues for years to come. This thesis proposes a latency-elastic and fault-tolerant cache not only for fault tolerant, but aiming at the performance issues. It varies the latency of cache access to achieve better-than-worst-case designs for improving performance.en_US
dc.language.isoen_USen_US
dc.titleA Latency-Elastic and Fault-Tolerant Cache for Improving Performance and Reliability on Low Voltage Operationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 International symposium on VLSI Design, Automation and Test (VLSI-DAT)en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.identifier.wosnumberWOS:000380584400083en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper