標題: SCR Device for On-Chip ESD Protection in RF Power Amplifier
作者: Lin, Chun-Yu
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic discharge (ESD);power amplifier (PA);radio-frequency (RF);silicon-controlled rectifier (SCR)
公開日期: 2013
摘要: To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a lowcapacitance, high-robust, and good-latch up-immune ESD protection device was proposed in this work. T he proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.
URI: http://hdl.handle.net/11536/136161
ISBN: 978-1-4673-2523-3
期刊: 2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
顯示於類別:會議論文