On the Structural Properties of Flash-Evaporated Thin Film GaAs with the Presense of Tin Vapor During Growth

Abstract

Structural analysis of x-ray diffraction peaks for flash-evaporated GaAs thin films has shown that the crystalline size is enhanced by the presence of tin vapor pressure during growth. This phenomenon can be related to the regrown process as the tin moves from the bulk to the outer growth surface. The forcing mechanism for tin movement is a temperature gradient.