具雙層鍺奈米線­聚(3­辛烷噻吩)之有機薄膜電晶體

Abstract

本論文以VLS成長法製備鍺奈米線，藉由PDMS的拉伸及壓縮轉移奈米線並賦予方向性。首先以PDMS拉伸的方式將鍺奈米線轉移置P3OT有機薄膜電晶體。以源極到汲極的方向為參考軸，我們分別設置方向為 0°、45°、 90°的奈米線於有機薄膜電晶體的通道中，結果發現當奈米線以0°方向排列時，載子遷移率與無奈米線有機薄膜電晶體相比可提升5.2倍(2.84 × 10-3 至 1.47 × 10-2 cm2/Vs)。奈米線以90°方向排列時能將電流開關比由5.53 × 102 提升至 2.55 × 104。進而我們將鍺奈米線以PDMS壓縮的方式排列出更高密度的奈米線，在奈米線以0°方向排列時其載子遷移率可達2.59 × 10-2 cm2/Vs (為純P3OT有機薄膜電晶體之9.1倍)。

In our study, we grew germanium nanowires by VLS mechanism, then we used PDMS to transfer nanowires. The nanowires were aligned by stretch or rebound of PDMS. Here, we stretched PDMS to transfer germanium nanowires into the P3OT organic thin-film transistor (OTFT), and the nanowires were set by three different directions. The include angle between the direction of source to drain are 0°, 45°, 90°, respectively. Then we found the mobility of the OTFT with germanium nanowires set in 0° is increased 5.2 times compared to without nanowires (2.84 × 10-3 to 1.47 × 10-2 cm2/Vs). Another, on/off ratio of the OTFT with germanium nanowires set in 90° is increased from 5.53 × 102 to 2.55 × 104. Further, we transfered nanowires by PDMS rebound to produce a device with a higher density of nanowires, and the mobility is more increased to 2.59 × 10-2 cm2/Vs (9.1 times compared to pristine P3OT OTFT).