Germanium Nanowire-induced Mobility Enhancement in Polythiophene Field Effect Transistors

Abstract

P-channel solution-processed organic thin film transistors based on a dual layer semiconducting network of polythiophene polymers and oriented germanium nanowires show a marked enhancement of up to five-fold in hole field effect mobility with respect to that of pristine polythiophene devices. The work presented here furthers our understanding of the interaction between polythiophene and oriented nanowires. The nanowire orientation relative to the soure and drain electrodes plays a crucial role in substantially influencing the polymer morphology and transistor performance.