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dc.contributor.authorHsieh, Gen-Wenen_US
dc.contributor.authorChan, Chih-Yuen_US
dc.contributor.authorTsai, Chih-Wenen_US
dc.date.accessioned2018-08-21T05:57:03Z-
dc.date.available2018-08-21T05:57:03Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/146991-
dc.description.abstractP-channel solution-processed organic thin film transistors based on a dual layer semiconducting network of polythiophene polymers and oriented germanium nanowires show a marked enhancement of up to five-fold in hole field effect mobility with respect to that of pristine polythiophene devices. The work presented here furthers our understanding of the interaction between polythiophene and oriented nanowires. The nanowire orientation relative to the soure and drain electrodes plays a crucial role in substantially influencing the polymer morphology and transistor performance.en_US
dc.language.isoen_USen_US
dc.titleGermanium Nanowire-induced Mobility Enhancement in Polythiophene Field Effect Transistorsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)en_US
dc.citation.spage199en_US
dc.citation.epage200en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000426457600057en_US
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