A Novel InGaN Blue Light-Emitting Diode with a Self-Textured Oxide Mask Structure

Abstract

A 460 nm InGaN/GaN blue light-emitting diode (LED) with a self-textured oxide mask (STOM) structure was fabricated and demonstrated. The design of the STOM on the GaN/sapphire substrate could be used to reduce the threading dislocation density in the epitaxial template and enhance the light extraction efficiency via the light scattering or deflection from the corrugated STOM. Under an injection current of 20 mA, the forward voltage of the STOM-LED and conventional LED (C-LED) was nearly identical at 3.41 V. Moreover, the leakage current of the STOM-LED was lower than the C-LED. Furthermore, the light output power of the STOM-LED was approximately 43% higher (at 20 mA) than the C-LED. This significant improvement was attributed to the enhanced light extraction via the STOM array.