High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scatteriny layers

Abstract

The flip-chip light-emitting diodes (FC-LEDs) with triple-light scattering layers were investigated comprising a top surface sapphire textured layer, an interface patterned sapphire layer, and a bottom naturally textured p-GaN layer. Such triple-textured layers are useful for light extraction efficiency enhancement. The light output power of FC-LEDs was increased 60% (at 350-mA current injection). compared to that of conventional FC-LEDs by implementing the triple-light scattering layers.