High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scatteriny layers

doi:10.1109/LPT.2008.919509

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, Chia-En	en_US
dc.contributor.author	Lee, Yea-Chen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:12:33Z	-
dc.date.available	2014-12-08T15:12:33Z	-
dc.date.issued	2008-03-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2008.919509	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9630	-
dc.description.abstract	The flip-chip light-emitting diodes (FC-LEDs) with triple-light scattering layers were investigated comprising a top surface sapphire textured layer, an interface patterned sapphire layer, and a bottom naturally textured p-GaN layer. Such triple-textured layers are useful for light extraction efficiency enhancement. The light output power of FC-LEDs was increased 60% (at 350-mA current injection). compared to that of conventional FC-LEDs by implementing the triple-light scattering layers.	en_US
dc.language.iso	en_US	en_US
dc.subject	flip-chip light-emitting diodes (FC-LEDs)	en_US
dc.subject	naturally textured p-GaN layer	en_US
dc.subject	patterned sapphire	en_US
dc.subject	sapphire textured layer	en_US
dc.subject	triple-light scattering layers	en_US
dc.title	High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scatteriny layers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2008.919509	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	20	en_US
dc.citation.issue	5-8	en_US
dc.citation.spage	659	en_US
dc.citation.epage	661	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000257952800110	-
dc.citation.woscount	10	-
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