Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing

Abstract

The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO(2)) textured film has been observed. The output power values of conventional and TiO(2) textured LEDs Lit an injection Current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO(2) textured LEDs at an injection Current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO(2) textured LEDs Lit an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-output-power InGaN/GaN MQW LED has been obtained by coating with a TiO(2) textured film.