High light output intensity of titanium dioxide textured light-emitting diodes

標題:	High light output intensity of titanium dioxide textured light-emitting diodes
作者:	Huang, K. C. Lan, W. H. Huang, K. F. Lin, J. C. Cheng, Y. C. Lin, W. J. Pan, S. M. 電子物理學系 Department of Electrophysics
關鍵字:	light-emitting diodes;titanium dioxide;external quantum efficiency
公開日期:	1-八月-2008
摘要:	Higher light output intensity and wider polar radiation pattern of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a different nanoscale titanium dioxide (TiO2) textured densities film have been observed. The light output power values and external quantum efficiency of the conventional LEDs at an injection current of 20 mA are 6.34 mW and 11.7%, respectively. The light output power values and external quantum efficiency of the nanoscaled TiO2 textured LEDs at an injection current of 20 mA are 7.55 mW and 14%, respectively. The light output intensity and power values of the nanoscaled TiO2 textured LEDs is approximately 65% and 20% higher than that of the conventional LEDs, respectively. (C) 2008 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2008.02.007 http://hdl.handle.net/11536/8499
ISSN:	0038-1101
DOI:	10.1016/j.sse.2008.02.007
期刊:	SOLID-STATE ELECTRONICS
Volume:	52
Issue:	8
起始頁:	1154
結束頁:	1156
顯示於類別：	期刊論文

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