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dc.contributor.authorHuang, K. C.en_US
dc.contributor.authorLan, W. H.en_US
dc.contributor.authorHuang, K. F.en_US
dc.contributor.authorLin, J. C.en_US
dc.contributor.authorCheng, Y. C.en_US
dc.contributor.authorLin, W. J.en_US
dc.contributor.authorPan, S. M.en_US
dc.date.accessioned2014-12-08T15:11:05Z-
dc.date.available2014-12-08T15:11:05Z-
dc.date.issued2008-08-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2008.02.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/8499-
dc.description.abstractHigher light output intensity and wider polar radiation pattern of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a different nanoscale titanium dioxide (TiO2) textured densities film have been observed. The light output power values and external quantum efficiency of the conventional LEDs at an injection current of 20 mA are 6.34 mW and 11.7%, respectively. The light output power values and external quantum efficiency of the nanoscaled TiO2 textured LEDs at an injection current of 20 mA are 7.55 mW and 14%, respectively. The light output intensity and power values of the nanoscaled TiO2 textured LEDs is approximately 65% and 20% higher than that of the conventional LEDs, respectively. (C) 2008 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectlight-emitting diodesen_US
dc.subjecttitanium dioxideen_US
dc.subjectexternal quantum efficiencyen_US
dc.titleHigh light output intensity of titanium dioxide textured light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2008.02.007en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume52en_US
dc.citation.issue8en_US
dc.citation.spage1154en_US
dc.citation.epage1156en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000259130700006-
dc.citation.woscount2-
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