標題: | High light output intensity of titanium dioxide textured light-emitting diodes |
作者: | Huang, K. C. Lan, W. H. Huang, K. F. Lin, J. C. Cheng, Y. C. Lin, W. J. Pan, S. M. 電子物理學系 Department of Electrophysics |
關鍵字: | light-emitting diodes;titanium dioxide;external quantum efficiency |
公開日期: | 1-Aug-2008 |
摘要: | Higher light output intensity and wider polar radiation pattern of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a different nanoscale titanium dioxide (TiO2) textured densities film have been observed. The light output power values and external quantum efficiency of the conventional LEDs at an injection current of 20 mA are 6.34 mW and 11.7%, respectively. The light output power values and external quantum efficiency of the nanoscaled TiO2 textured LEDs at an injection current of 20 mA are 7.55 mW and 14%, respectively. The light output intensity and power values of the nanoscaled TiO2 textured LEDs is approximately 65% and 20% higher than that of the conventional LEDs, respectively. (C) 2008 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.sse.2008.02.007 http://hdl.handle.net/11536/8499 |
ISSN: | 0038-1101 |
DOI: | 10.1016/j.sse.2008.02.007 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 52 |
Issue: | 8 |
起始頁: | 1154 |
結束頁: | 1156 |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.