Evaluation of NC-FinFET Based Subsystem-Level Logic Circuits Using SPICE Simulation

Abstract

This work examines the metal-ferroelectricinsulator-semiconductor (MFIS) negative-capacitance FinFET (NC-FinFET) based VLSI subsystem-level logic circuits. With the aid of a short-channel NC-FinFET compact model, we confirm the functionality and determine the standby-power/switching-energy/delay performance of logic circuits (5-stage inverter and 4-bit Manchester carry-chain (MCC) adder) employing 14nm ULP NC-FinFETs versus FinFETs. We show that the inverse V-ds-dependency of threshold voltage (V-T), also known as the negative DIBL, of NCFET is not only acceptable but also beneficial for the speed performance of both the static and pass-transistor logic (PTI.) circuits, especially for the PTI, at low V-DD.