標題: A Novel Three-Dimensional Submicron ZnO Inverter Technology with Refined Contact Design
作者: Lin, Horng-Chih
Kuan, Chin-I
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Film profile engineering (FPE);oxide semiconductor;zinc-oxide (ZnO);zinc oxynitride (ZnON);inverter;thin-film transistors (TFTs);voltage gain
公開日期: 1-一月-2019
摘要: Impact of source/drain contacts on the operation performance of three-dimensional (3-D) zinc-oxide (ZnO) logic inverters is explored in this work. The 3-D inverters consisting of a load vertically stacking on a driver were constructed with the film-profile-engineered (FPE) approach. Use of an ultrathin ZnON contact layer is proposed and demonstrated to be effective in reducing the source/drain (S/D) series resistances (RSD) of the devices. From the material characterization, the improvement in the electrical characteristics is attributed to the suppression of an insulating interfacial oxide layer present at the contact interface which may impede the carrier transport. Measurement results of inverters indicate that the voltage gain can be improved from 9.7 V/V to 13.2 V/V as the scheme is implemented.
URI: http://hdl.handle.net/11536/153336
ISBN: 978-1-7281-1853-6
期刊: 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019)
起始頁: 0
結束頁: 0
顯示於類別:會議論文