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dc.contributor.authorChen, Yu-Lingen_US
dc.contributor.authorTseng, Ya-Hsinen_US
dc.contributor.authorChen, Yen-Chunen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorHer, Tsing-Huaen_US
dc.contributor.authorLuo, Chih-Weien_US
dc.date.accessioned2020-07-01T05:20:33Z-
dc.date.available2020-07-01T05:20:33Z-
dc.date.issued2018-01-01en_US
dc.identifier.isbn978-1-9435-8042-2en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/154257-
dc.description.abstractNear-IR femtosecond laser ablation of monolayer tungsten diselenide WSe2 on sapphire is demonstrated. The ablation threshold is found low (below 10 mJ/cm(2)), due to its low dimensionality and weak coupling to substrates. Substrate-dependent ablation threshold is predicted and will be discussed.en_US
dc.language.isoen_USen_US
dc.titleFemtosecond-Laser Ablation of Monolayer Tungsten Diselenide (WSe2) on Sapphireen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000526031001394en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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