標題: | Spectroscopic Signatures for Interlayer Coupling in MoS2-WSe2 van der Waals Stacking |
作者: | Chiu, Ming-Hui Li, Ming-Yang Zhang, Wengjing Hsu, Wei-Ting Chang, Wen-Hao Terrones, Mauricio Terrones, Humberto Li, Lain-Jong 交大名義發表 電子物理學系 National Chiao Tung University Department of Electrophysics |
關鍵字: | transition metal dichalcogenides;tungsten diselenides;molybdenum disulfide;van der Wall stacking;heterojunction;interlayer coupling |
公開日期: | 1-九月-2014 |
摘要: | Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E \'\' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling. |
URI: | http://dx.doi.org/10.1021/nn504229z http://hdl.handle.net/11536/25193 |
ISSN: | 1936-0851 |
DOI: | 10.1021/nn504229z |
期刊: | ACS NANO |
Volume: | 8 |
Issue: | 9 |
起始頁: | 9649 |
結束頁: | 9656 |
顯示於類別: | 期刊論文 |