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dc.contributor.authorChiu, Ming-Huien_US
dc.contributor.authorLi, Ming-Yangen_US
dc.contributor.authorZhang, Wengjingen_US
dc.contributor.authorHsu, Wei-Tingen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorTerrones, Mauricioen_US
dc.contributor.authorTerrones, Humbertoen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.date.accessioned2014-12-08T15:36:48Z-
dc.date.available2014-12-08T15:36:48Z-
dc.date.issued2014-09-01en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn504229zen_US
dc.identifier.urihttp://hdl.handle.net/11536/25193-
dc.description.abstractStacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E \'\' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.en_US
dc.language.isoen_USen_US
dc.subjecttransition metal dichalcogenidesen_US
dc.subjecttungsten diselenidesen_US
dc.subjectmolybdenum disulfideen_US
dc.subjectvan der Wall stackingen_US
dc.subjectheterojunctionen_US
dc.subjectinterlayer couplingen_US
dc.titleSpectroscopic Signatures for Interlayer Coupling in MoS2-WSe2 van der Waals Stackingen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nn504229zen_US
dc.identifier.journalACS NANOen_US
dc.citation.volume8en_US
dc.citation.issue9en_US
dc.citation.spage9649en_US
dc.citation.epage9656en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000342184400099-
dc.citation.woscount1-
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