標題: A 94 GHz 10.8 mW Low-Noise Amplifier With Inductive Gain Boosting in 40 nm Digital CMOS Technology
作者: Yeh, Po-Chen
Kuo, Chien-Nan
交大名義發表
National Chiao Tung University
關鍵字: W-Band;low noise amplifier;CMOS;low-power;in-boosting;millimeter-wave
公開日期: 1-一月-2019
摘要: A W-band low-power, low-noise amplifier is designed and fabricated in 40 nm digital CMOS technology. The method of inductive gain boosting is utilized without extra power consumption. The circuit only consumes 10.8 mW dc power with a supply voltage of 1 V. The measured peak power gain achieves 14.5 dB at 93 GHz, while the minimum noise figure is 6.4 dB at 89 GHz. The circuit occupies a core area of only 0.07 mm(2).
URI: http://hdl.handle.net/11536/155523
ISBN: 978-1-7281-3517-5
期刊: PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC)
起始頁: 1357
結束頁: 1359
顯示於類別:會議論文