標題: | A 94 GHz 10.8 mW Low-Noise Amplifier With Inductive Gain Boosting in 40 nm Digital CMOS Technology |
作者: | Yeh, Po-Chen Kuo, Chien-Nan 交大名義發表 National Chiao Tung University |
關鍵字: | W-Band;low noise amplifier;CMOS;low-power;in-boosting;millimeter-wave |
公開日期: | 1-一月-2019 |
摘要: | A W-band low-power, low-noise amplifier is designed and fabricated in 40 nm digital CMOS technology. The method of inductive gain boosting is utilized without extra power consumption. The circuit only consumes 10.8 mW dc power with a supply voltage of 1 V. The measured peak power gain achieves 14.5 dB at 93 GHz, while the minimum noise figure is 6.4 dB at 89 GHz. The circuit occupies a core area of only 0.07 mm(2). |
URI: | http://hdl.handle.net/11536/155523 |
ISBN: | 978-1-7281-3517-5 |
期刊: | PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) |
起始頁: | 1357 |
結束頁: | 1359 |
顯示於類別: | 會議論文 |