An Inductor-Coupling Resonated CMOS Low Noise Amplifier for 3.1-10.6GHz Ultra-Wideband System

Abstract

In this paper, a low power low-noise amplifier (LNA) using inductor-coupling resonated technique is designed for ultra-wideband (UWB) wireless system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with inductor-coupling resonated load, and an output buffer; it was fabricated in TSMC 0.18um standard RF CMOS process. The UWB LNA gives 10.8dB power gain and 9.4GHz 3dB bandwidth (1.2GHz - 10.6GHz) while consuming only 6.2mW through a 1.2V supply, including output buffer. Over the 3.1GHz - 10.6GHz frequency band, a minimum noise figure of 3.9dB and input return loss lower than -5.7dB have been achieved.