標題: | A Novel Double-gated Nanowire TFT and Investigation of Its Size Dependency |
作者: | Chen, Wei-Chen Lin, Chuan-Ding Lin, Horng-Chih Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2009 |
摘要: | A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated Configuration, the function of threshold voltage modulation is investigated. |
URI: | http://hdl.handle.net/11536/16954 |
ISBN: | 978-1-4244-2784-0 |
期刊: | PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS |
起始頁: | 121 |
結束頁: | 122 |
顯示於類別: | 會議論文 |