Design of a fully integrated high linearity dual-band CMOS LNA

Abstract

A fully-integrated dual-band LNA (Low Noise Amplifier) with high linearity is presented in this thesis. Designed and implemented in 0.25 mu m mixed-signal CMOS process, the LNA simultaneously delivered narrow-bans gain and matching at 2.45GHz and 5.25GHz. The LNA exhibits input matching with S-11 of -20.48dB at 2.45GHz and -16.6dB at 5.25GHz. And it achieves small-signal gain of 5.78dB and 3.24dB, noise figure 4.7dB and 5.69dB, and IIP3 7dBm and 17dBm.