Design of a 0.25-mu m CMOS 5.25GHz transceiver front-end

Abstract

This paper describes the design consideration and simulation performance for a fully integrated CMOS RF front-end for 5.25 GHz application. The single chip front-end circuit consists: a 2.65dB insertion loss transmit/receive switch (T/R switch), a 13dB power gain, 2.9dB NF low noise amplifier (LNA), and a 15dBm Pout-1dB power amplifier (PA). The IC has fabricated in a TSMC 0.25-mum CMOS technology. To achieve single chip design target, this chip was designed without any off-chip matching component. The front-end circuit was designed for two operation modes: transmission mode (TX) and receiving mode (RX). We can switch two operation modes by changing the control voltage of the T/R switch. The simulation results of the TX mode has the power gain 7.27 dB and the Pout-1dB is 12 dBm. The RX mode power gain is 9.64 dB and the IIP3 is 1.1 dBm.