RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation

Title:	RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
Authors:	Chin, A Chan, KT Huang, CH Chen, C Liang, V Chen, JK Chien, SC Sung, SW Duh, DS Lin, WJ Zhu, CX Li, MF McAlister, SP Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	2003
Abstract:	High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.
URI:	http://hdl.handle.net/11536/18688
ISBN:	0-7803-7872-5
Journal:	2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST
Begin Page:	375
End Page:	378
Appears in Collections:	Conferences Paper