標題: | RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation |
作者: | Chin, A Chan, KT Huang, CH Chen, C Liang, V Chen, JK Chien, SC Sung, SW Duh, DS Lin, WJ Zhu, CX Li, MF McAlister, SP Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2003 |
摘要: | High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates. |
URI: | http://hdl.handle.net/11536/18688 |
ISBN: | 0-7803-7872-5 |
期刊: | 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST |
起始頁: | 375 |
結束頁: | 378 |
顯示於類別: | 會議論文 |