New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices

Abstract

Plasma etching of poly-silicon gate in CMOS devices induces the plasma edge damage. This damage will be enhanced in the successive plasma processes. New experimental evidences of this effect will be examined in this study. Results have been verified for both surface channel nand p-MOSFETs. First, from the measurements of high-density antenna structures, this enhanced edge damage has been characterized by the charge-pumping (CP) profiling technique. Then, a 4-phase edge damage mechanism has been proposed. For the first time, it was found that a two-peak spatial distribution of the interface state was found near the device drain region. We call it (P) under bar lasma (C) under bar harging (E) under bar nhanced (H) under bar ot (C) under bar arrier (PCE-HC) effect. This enhanced damage effect will induce further device degradation, in particular for the scaled devices.